PUMH10,125

Overview

The Nexperia PUMH10,125 is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two NPN transistors with built-in bias resistors: R1 is nominally 2.2 kΩ and R2 is nominally 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) minimum of 100 at 10 mA and 5 V, and a collector-emitter saturation voltage maximum of 100 mV at 5 mA collector current.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count.
• Provides simplified circuit design by combining switching functionality with base drive requirements.
• Offers low profile packaging suitable for space-constrained surface-mount applications.

Applications

• Low current peripheral driver circuits
• Control of IC inputs
• Replacement for general-purpose transistors in digital logic applications

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel specifications and manufacturing site codes. Ensure compatibility with standard SMT pick-and-place equipment given the small form factor. Confirm RoHS3 compliance status for the specific batch prior to integration into final assemblies.

Selection Notes

Select this component when a compact dual NPN solution with integrated base biasing is required. The 2.2 kΩ input resistor suits moderate drive currents, while the 47 kΩ emitter resistor provides defined off-state leakage paths. Verify that the 50 V breakdown voltage meets the system's peak transient requirements.

Part Context

The PUMH10 belongs to Nexperia's family of NPN/NPN resistor-equipped double transistors. It serves as the NPN counterpart to the PUMD10 (NPN/PNP) and PUMB10 (PNP/PNP) variants. This series is designed to replace discrete transistor networks in digital switching applications, offering reduced board space and assembly costs.

Replacement Considerations

Direct functional substitutes within the same package include other Nexperia RETs with similar voltage and current ratings, such as the PUMH11 or PUMH24, provided their internal resistor values match the circuit design requirements. Cross-vendor equivalents require verification of pinout compatibility and thermal performance.

FAQ

What are the nominal values of the built-in bias resistors?

The internal bias resistor R1 (input/base) is nominally 2.2 kΩ, and the resistor R2 (emitter) is nominally 47 kΩ.

What is the maximum total power dissipation for the device?

The maximum total power dissipation (Ptot) for the entire device is 300 mW at an ambient temperature of 25 °C.

How is the device packaged?

The PUMH10,125 is supplied in a TSSOP6 plastic surface-mounted device package, also identified as SOT363-3.