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The Nexperia PUMH11-QF is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two NPN transistors with built-in bias resistors, where R1 equals 10 kΩ and the R2/R1 ratio is nominally 1. Key electrical limits include a collector-emitter voltage of 50 V, a maximum output current of 100 mA per transistor, and a total power dissipation of 300 mW at 25 °C ambient temperature. The device operates within a junction temperature range up to 150 °C and features a DC current gain minimum of 30.
Verify the specific suffix 'QF' against official Nexperia ordering lists to confirm tape-and-reel packaging details. Ensure the selected distributor provides traceability documentation required for AEC-Q101 qualified components. Confirm that the marking code matches the H%1 format specified in the datasheet revision history.
Select this component when space constraints require a dual NPN configuration with integrated base resistors. The 10 kΩ input resistance suits logic-level driving interfaces. Verify that the 50 V collector-emitter rating meets the circuit's maximum voltage requirements and that the 300 mW thermal dissipation capability is sufficient for the intended PCB footprint.
This part belongs to the PUMH series of NPN/NPN resistor-equipped double transistors. It serves as the complement to PNP/PNP variants like the PUMB11-Q. The device replaces discrete resistor-transistor combinations in digital switching applications, offering a standardized solution for low-current peripheral interfacing in compact electronic designs.
Direct functional substitutes include the PUMH11 without the Q suffix for non-automotive contexts. For complementary polarity needs, consider the PNP/PNP PUMB11-Q or the NPN/PNP PUMD3-Q. Verify pin compatibility and resistor values before substitution.