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The Nexperia PUMH11-QX is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two NPN transistors with built-in bias resistors, where R1 is nominally 10 kΩ and the R2/R1 ratio is 1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current capability of 100 mA per transistor, and a total power dissipation of 300 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) minimum of 30 at 5 mA and a transition frequency (fT) typical value of 230 MHz. It is qualified according to AEC-Q101 for automotive applications.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the selected variant matches the required automotive qualification status if intended for vehicle electronics. Cross-reference the marking code H%1 with manufacturing site codes during incoming inspection to validate authenticity and traceability.
Select this component when space-constrained designs require dual NPN switching with integrated base biasing. The SOT363-3 package replaces two separate SOT323 devices, reducing pick-and-place costs. Verify that the 50 V collector-emitter voltage and 100 mA current limits accommodate the maximum load requirements of the target application circuit.
The PUMH11-Q belongs to Nexperia's family of resistor-equipped double transistors. Its NPN/PNP complement is the PUMD3-Q, while the PNP/PNP complement is the PUMB11-Q. This specific part number denotes the NPN/NPN configuration with 10 kΩ input resistors, designed for compact digital logic interfacing and signal control tasks.
Direct functional equivalents include the PUMD3-Q for NPN/PNP configurations and the PUMB11-Q for PNP/PNP configurations. Verify pin compatibility and thermal characteristics before substituting with other RET families.