SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PUMH11/ZLF is an NPN/NPN double Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88) surface-mounted plastic package. It integrates two independent NPN transistors with built-in bias resistors, where R1 equals 10 kΩ and the R2/R1 ratio is nominally 1. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. The component features a transition frequency of 230 MHz and operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the requested variant matches the required RoHS and REACH specifications for your region. Cross-reference the part number with the latest datasheet revision history to confirm package version accuracy before finalizing procurement orders.
Select this component when space constraints require a dual transistor solution in a small SMD footprint. Verify that the 10 kΩ input resistor value aligns with the driving source impedance and logic levels. Confirm that the total power dissipation requirements fit within the thermal derating curve for the intended operating environment and PCB copper area.
The PUMH11 belongs to Nexperia's family of resistor-equipped transistors designed to replace multiple discrete components. Its complement includes the PUMD3 (NPN/PNP) and PUMB11 (PNP/PNP). This series is engineered for cost reduction and board space optimization in portable electronics and digital control circuits requiring compact switching elements.
Direct functional substitutes include the PUMH9 and PUMH7 from the same manufacturer family. When replacing, verify that the bias resistor values and ratios match the original circuit requirements to ensure proper transistor biasing and switching performance.