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The PUMH13-QF is an NPN/NPN double Resistor-Equipped Transistor (RET) in a SOT363-3 package. It features built-in bias resistors with R1 = 4.7 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current (IO) of 100 mA, DC current gain (hFE) of 100 at IC = 10 mA, and transition frequency (fT) of 230 MHz. Total power dissipation is 300 mW per device. The component is AEC-Q101 qualified for automotive applications.
Verify the specific suffix 'F' against the official Nexperia datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the ordering code matches the required quantity format. Confirm that the AEC-Q101 qualification status remains valid for the intended automotive application environment.
Select this component when dual NPN switching with integrated biasing is required in a compact footprint. The 50 V rating and 100 mA current capability suit low-power digital logic interfacing. Verify thermal constraints, as total power dissipation is limited to 300 mW per device under standard conditions.
This part belongs to the Nexperia PUMH series of NPN/NPN resistor-equipped transistors. It shares the SOT363-3 package form factor with other RETs but differs in internal resistor values and transistor configurations. It serves as a space-saving alternative to discrete transistor and resistor combinations.
Direct substitutes must match the NPN/NPN configuration, 50 V VCEO, 100 mA IO, and identical R1/R2 values. Verify pinout compatibility within the SOT363-3 package. Check if alternative manufacturers offer equivalent AEC-Q101 qualified parts with matching thermal characteristics.