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The Nexperia PUMH13-QX is an NPN/NPN double Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mounted package. It integrates two NPN transistors with built-in bias resistors, specifically R1 = 4.7 kΩ and R2 = 47 kΩ per transistor. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature. The transition frequency (fT) reaches 230 MHz, and it operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the requested variant matches the SOT363-3 package version defined in the latest product data sheet revision. Ensure compliance with automotive qualification requirements if deploying in vehicle systems.
Select this component when space-constrained designs require dual NPN switching with integrated base drive. The fixed resistor ratio simplifies biasing calculations compared to discrete transistor pairs. Verify thermal constraints on the PCB footprint, as total power dissipation limits apply to the combined device rather than individual transistors.
This part belongs to the PUMH series of NPN/NPN Resistor-Equipped Transistors from Nexperia. It utilizes the TSSOP6 (SOT363-3) plastic surface-mounted package. The 'Q' designation indicates automotive qualification under AEC-Q101 standards. The 'X' suffix typically denotes specific packaging configurations such as cut tape or reels, subject to manufacturer definitions.
Direct functional substitutes include other NPN/NPN RETs in the SOT363 package family, such as the PUMH9 or PUMH11, provided their internal resistor values and current ratings align with the circuit requirements. Verify pinout compatibility and thermal resistance characteristics before substitution.