PUMH13F

Overview

The Nexperia PUMH13 is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mounted package. It integrates two NPN transistors with built-in bias resistors, specifically R1 at 4.7 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Total power dissipation reaches 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. The transition frequency is typically 230 MHz, with a DC current gain minimum of 100.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce component count
• Designed for simplified circuit design and reduced pick-and-place costs
• Provides high-density packaging suitable for space-constrained applications

Applications

• Low current peripheral driver circuits
• Controlling IC inputs
• Replacement of general purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact tape and reel configuration or cut tape availability. Confirm that the requested package version matches the SOT363-3 specification defined in the latest product data sheet revision. Ensure compliance with RoHS standards as indicated in the ordering information table.

Selection Notes

Select this component when a compact dual NPN solution with integrated base biasing is required. The fixed resistor ratio simplifies logic level shifting or switching tasks without external components. Verify that the 50 V collector-emitter voltage rating meets the system requirements and that the 100 mA current limit is sufficient for the intended load.

Part Context

This part belongs to the PUMH series of NPN/NPN resistor-equipped double transistors. It serves as the NPN complement to the PUMD13 (NPN/PNP) and PUMB13 (PNP/PNP) variants within the same family. All members share similar physical dimensions and thermal characteristics while differing in transistor polarity configurations.

Replacement Considerations

Direct functional substitutes include the PUMH13-QX and other PUMH13 variants from Nexperia. Cross-manufacturer equivalents such as the DTC114ECA or MMUN2235L may be considered if pinout compatibility and electrical parameters align with the specific application requirements.

FAQ

What are the values of the built-in bias resistors?

The built-in bias resistor R1 is 4.7 kΩ and the bias resistor R2 is 47 kΩ.

What is the maximum total power dissipation for the device?

The maximum total power dissipation for the entire device is 300 mW at an ambient temperature of 25 °C.

Which package type does the PUMH13 use?

The PUMH13 utilizes a TSSOP6 plastic surface-mounted package, also designated as SOT363-3.