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The PUMH14 is a dual NPN resistor-equipped transistor (RET) housed in a SOT363 (SC-88) plastic surface-mounted device package. It integrates two independent NPN transistors, each with a built-in 47 kΩ bias resistor on the base input. The second resistor for each transistor is left open. Key electrical parameters include a collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. The total power dissipation is rated at 200 mW per transistor and 300 mW for the entire device at 25 °C ambient temperature.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the non-automotive qualification status aligns with the target application requirements. Ensure the selected distributor is authorized by Nexperia to guarantee product authenticity and traceability.
Select this component when space constraints require a dual transistor solution with integrated base biasing. The 47 kΩ internal resistor eliminates external components for standard switching logic interfaces. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the driven load.
This device belongs to the PUMH series of NPN/NPN resistor-equipped transistors. It serves as the complement to the PUMD14 (NPN/PNP) and PUMB14 (PNP/PNP) variants within the same family. All members share the identical SOT363 package footprint and pinout configuration.
Direct functional replacements include the PEMH14. Designers should verify that alternative RET packages maintain compatible thermal resistance values and pin assignments to ensure seamless integration without PCB layout modifications.