SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia PUMH17,115 is a dual NPN resistor-equipped transistor (RET) housed in the SOT363 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors, specifically R1 at 47 kΩ and R2 at 22 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous DC output current of 100 mA per transistor. Total power dissipation is rated at 300 mW, with individual transistor limits of 200 mW. Operating junction temperatures range from -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and tape-and-reel specifications. Confirm that the SOT363 package variant matches the required footprint for the target PCB layout. Ensure compliance with RoHS directives as specified in the product data sheet before finalizing procurement orders.
Select this component when space constraints require integrated biasing for dual NPN switching tasks. The fixed 47 kΩ input resistor and 22 kΩ emitter resistor are optimized for standard logic interface levels. Verify that the 100 mA current rating meets the load requirements without exceeding the 300 mW total power dissipation limit under expected thermal conditions.
This part belongs to the PUMH series of NPN/NPN resistor-equipped transistors. It serves as the SC-88 packaged counterpart to the PEMH17, which utilizes the larger SOT666 package. Both variants share identical electrical characteristics but differ in physical dimensions and thermal resistance profiles.
PEMH17 (SOT666 package)
The internal bias resistors are R1 = 47 kΩ and R2 = 22 kΩ.
The maximum collector-emitter voltage (VCEO) is 50 V.
The datasheet does not specify transition frequency (fT); it is primarily characterized for DC switching and low-current peripheral driving.