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The Nexperia PUMH19 is a dual NPN Resistor-Equipped Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in bias resistors, where R1 is nominally 22 kΩ and R2 is open. The device supports a maximum collector-emitter voltage of 50 V and an output current of 100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. It features a DC current gain (hFE) of 100 at 1 mA and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix matches the required packaging format, such as tape and reel quantities. Confirm that the manufacturing site code on the marking aligns with project requirements. Ensure compliance with RoHS directives and check the latest product status on the manufacturer website before finalizing procurement specifications.
Select the PUMH19 when a compact dual NPN solution with fixed base biasing is required. Compare against the PUMD19 (NPN/PNP) or PUMB19 (PNP/PNP) complements if different polarities are needed. Verify that the 22 kΩ input resistor value suits the driving logic levels and that the 50 V rating accommodates the system voltage peaks.
The PUMH19 belongs to the PUMH series of NPN/NPN resistor-equipped transistors. It serves as the NPN counterpart to the PUMD19 (NPN/PNP) and PUMB19 (PNP/PNP) devices. All variants share similar electrical characteristics and utilize the same SOT363 plastic surface-mount package for space-efficient PCB layouts.
Direct functional replacements within the same family include the PUMD19 and PUMB19, provided polarity differences are accounted for. Verify pin compatibility and thermal resistance values when substituting with other RET devices from different manufacturers.