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The PUMH24,115 is a dual NPN Resistor-Equipped Transistor (RET) housed in a SOT363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in bias resistors, where R1 and R2 are both nominally 100 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a DC output current of 20 mA per transistor. Total power dissipation is rated at 300 mW at an ambient temperature of 25 °C. Key electrical characteristics include a collector-base cut-off current of 100 nA and a DC current gain of 80 minimum at 5 mA collector current.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and manufacturing origin. Confirm that the SOT363 package variant aligns with the target PCB footprint requirements. Ensure compliance with RoHS directives and check for any recent Product Change Notifications regarding marking or assembly updates before finalizing procurement orders.
Select this component when space constraints require a dual NPN configuration with integrated base resistors. The 100 kΩ resistor values are suitable for standard logic level interfacing. Verify that the 20 mA continuous current rating meets the load requirements. Consider the thermal resistance of 625 K/W per transistor for heat dissipation calculations in enclosed environments.
The PUMH24 belongs to Nexperia's family of NPN/NPN Resistor-Equipped Transistors. It serves as the SC-88 packaged counterpart to the PEMH24, which utilizes the SOT666 package. This series is designed to replace multiple discrete components, offering a compact solution for digital switching and signal conditioning tasks in consumer and industrial electronics.
Direct functional substitutes within the same family include the PEMH24, which shares identical electrical specifications but utilizes the SOT666 package. Designers must verify pin compatibility and physical dimensions when substituting between SOT363 and SOT666 packages.