PUMH30,115

PUMH30,115

  • Description:TRANS PREBIAS 2NPN 50V 6TSSOP
  • Series:-

SKU:8b6059b59f86 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:300mW
  • Grade:Automotive
  • Qualification:AEC-Q100
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PUMH30,115

Overview

The PUMH30,115 is an NPN/NPN double Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates two NPN transistors with built-in bias resistors in a SOT363 (SC-88) surface-mounted plastic package. The device features a collector-emitter voltage of 50 V and an output current capability of 100 mA per transistor. Each input includes a bias resistor R1 with a nominal value of 2.2 kΩ, while the second resistor R2 remains open. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce component count
  • Simplifies circuit design by eliminating external base resistors
  • Reduces pick and place costs through compact SOT363 packaging
  • Provides low current peripheral driver functionality

Applications

  • Low current peripheral driver circuits
  • Control of IC inputs
  • Cost-saving alternative for discrete BC847BS and BC847BV configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm manufacturing origin and packing method. The -115 suffix indicates a 4 mm pitch, 8 mm tape and reel packing configuration. Confirm that the required quantity aligns with standard packing quantities such as 3000 units per reel. Ensure compatibility with reflow soldering processes as specified in the thermal characteristics section.

Selection Notes

Select this component when space constraints require replacing two separate SOT323 devices with a single integrated solution. Verify that the 2.2 kΩ internal bias resistor meets the circuit's drive requirements. Ensure the application operates within the 50 V collector-emitter voltage limit and does not exceed the 100 mA output current rating per transistor. Consider the 300 mW total power dissipation limit for thermal management on the PCB.

Part Context

The PUMH30 belongs to the PEMH30/PUMH30 family of NPN/NPN double resistor-equipped transistors. It serves as the SOT363 packaged variant, distinct from the PEMH30 which utilizes the SOT666 package. This series is designed to replace multiple discrete components, offering a compact footprint suitable for portable electronics and dense printed-circuit board layouts.

Replacement Considerations

The PUMD30 is listed as the NPN/PNP complement within the same product family. Designers should verify pinout compatibility if substituting with other RET families. No direct cross-manufacturer equivalents are confirmed in the provided datasheet.

PUMH30,115PUMH30,115

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