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The PUMH7H-QF is a dual NPN pre-biased transistor array manufactured by Nexperia USA Inc. It integrates two NPN bipolar junction transistors with internal base resistors within a compact surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Each transistor includes an integrated base resistor, typically specified at 4.7 kΩ for this series variant, simplifying circuit design by reducing component count. The unit is housed in a 6-TSSOP (SC-88/SOT-363) package, offering a small footprint suitable for space-constrained applications. It supports a maximum power dissipation of 300 mW and operates within a temperature range up to +150 °C.
Verify the specific suffix '-QF' against the official Nexperia datasheet to confirm automotive grade AEC-Q101 qualification status. Ensure the ordering code matches the exact resistance value and package variant required for your design. Cross-reference with authorized distributors to confirm current production status and availability timelines.
Select the PUMH7H-QF when a dual NPN switch with integrated biasing is needed for automotive or industrial applications. Compare the 4.7 kΩ base resistance value against circuit requirements for drive current and saturation levels. Consider the 6-TSSOP thermal performance and pinout compatibility with existing footprints during the schematic capture phase.
This component belongs to the Nexperia PUMH series of pre-biased transistors, designed to replace multiple discrete components. The 'Q' suffix indicates automotive qualification, while 'H' denotes specific electrical characteristics such as base resistance. It serves as a drop-in replacement for similar dual NPN arrays in modern embedded systems.
Check for direct equivalents like PUMH7,115 for standard commercial grades. Verify if PUMH17F or PUMH9,115 offer alternative resistance values better suited for specific drive currents. Ensure any substitute maintains the same 6-TSSOP pinout and voltage ratings.