PUMH9-QH

Overview

The Nexperia PUMH9-Q is a dual NPN Resistor-Equipped Transistor (RET) housed in a TSSOP6 (SOT363-3) surface-mount package. It integrates two independent NPN transistors with built-in bias resistors, featuring an input resistor R1 of 10 kΩ and a bias ratio R2/R1 of 4.7. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA per transistor. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at 25 °C ambient temperature. It includes a transition frequency (fT) of 230 MHz and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Integrates dual NPN transistors with fixed internal bias resistors to reduce external component count
• Qualified according to AEC-Q101 for reliable operation in automotive environments
• Utilizes a compact SOT363-3 plastic surface-mounted package to minimize board space

Applications

• Digital switching applications in automotive and industrial segments
• Cost-effective replacement for discrete BC847-Q series components
• Direct interfacing and control of integrated circuit inputs
• Load switching circuits requiring simplified drive logic

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the procurement channel provides valid traceability documentation required for automotive-grade components. Cross-reference the marking code H%9 with manufacturing site codes to validate authenticity. Ensure compliance with RoHS directives as specified in the product data sheet prior to finalizing orders.

Selection Notes

Select this component when designing circuits requiring dual NPN switching with integrated base drive resistors. The 10 kΩ input resistance simplifies interface design with standard logic outputs. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the target application. Consider the 300 mW total power dissipation limit when calculating thermal management requirements on the PCB footprint.

Part Context

The PUMH9-Q belongs to Nexperia's family of resistor-equipped double transistors designed for digital signal processing. It serves as the NPN/NPN variant within the series, complemented by the PNP/PNP PUMB9-Q and NPN/PNP PUMD9-Q. This configuration allows designers to replace multiple discrete components with a single surface-mount device, optimizing assembly efficiency and reducing overall bill of materials complexity.

Replacement Considerations

PUMH9,115

FAQ

What are the values of the built-in bias resistors?

The input bias resistor (R1) is 10 kΩ, and the bias resistor ratio (R2/R1) is 4.7.

Is the PUMH9-Q suitable for automotive applications?

Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the maximum total power dissipation for the device?

The total power dissipation (Ptot) for the entire device is 300 mW at an ambient temperature of 25 °C or lower.