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The Nexperia PUMH9,115 is a dual NPN Resistor-Equipped Transistor (RET) housed in a SOT363-3 (SC-88/TSSOP6) surface-mount package. It integrates two independent NPN transistors with built-in bias resistors: R1 = 10 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current capability of 100 mA per transistor, and a DC current gain (hFE) minimum of 100 at IC = 5 mA. The device features a transition frequency (fT) of 230 MHz and operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix '115' corresponds to the tape-and-reel packaging configuration required for your assembly line. Confirm that the SOT363-3 footprint matches your PCB design guidelines. Ensure compliance with RoHS and REACH directives as stated in the product data sheet before finalizing procurement specifications.
Select this component when space constraints require a dual NPN solution with integrated biasing. The 10 kΩ input resistor suits standard logic levels, while the 47 kΩ pull-down resistor ensures defined off-states. Verify thermal dissipation requirements against the 200 mW per transistor limit on FR4 PCBs to ensure reliable operation under continuous load conditions.
The PUMH9 belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). It serves as the NPN/NPN complement to the PUMB9 (PNP/PNP) and PUMD9 (NPN/PNP). This series is designed to replace multiple discrete components, offering a compact alternative for general-purpose digital switching and signal conditioning tasks in consumer and industrial electronics.
Direct functional equivalents include the PUMH9,115 from other manufacturers if pinout and electrical characteristics match. For complementary polarity needs, consider the PUMB9 or PUMD9 variants. Verify that any substitute maintains the same SOT363-3 package dimensions and bias resistor values to ensure board compatibility.