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Q8010LH2TP is listed in the Triacs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is TRIAC ALTRNSTR 800V 10A ITO220AB. Review the specifications below when checking this part for your BOM.
The Littelfuse Q8010LH2TP is a high-current alternistor triac designed for demanding power control applications. It features an 800 V repetitive off-state voltage and conducts a 10 A RMS on-state current. The device utilizes a TO-220AB through-hole package, facilitating robust thermal management and secure mounting in industrial environments. Key electrical characteristics include a maximum holding current of 50 mA and a gate trigger voltage of 2.5 V. It operates within a temperature range of -40°C to +125°C, ensuring reliability under varying thermal conditions.
Verify the specific suffix 'LH2TP' against official Littelfuse documentation to confirm pinout configuration and isolation requirements. Ensure that the TO-220AB package dimensions align with the target PCB layout and heatsinking infrastructure. Cross-reference the datasheet for precise thermal resistance values to validate long-term operational safety under continuous load conditions.
Select this component when high surge current tolerance and rapid commutation are critical. The alternistor architecture provides superior immunity to false triggering compared to standard triacs in inductive loads. Evaluate the gate trigger current specifications to ensure compatibility with the driving circuit's output capabilities while maintaining reliable latching behavior.
This part belongs to the Qxx10x series of high-power thyristors manufactured by Littelfuse. The series is engineered for heavy-duty switching tasks where standard triacs may fail due to excessive current rates of rise. The Q8010LH2TP represents a specific variant within this family, tailored for applications requiring both high voltage blocking and significant current conduction capacity.
Consult official Littelfuse substitution guides for verified equivalents. Generic replacements may lack the specific alternistor characteristics required for safe operation in high-di/dt environments.
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