QPA1006D

RF Amplifiers Overview

The QPA1006D is a wideband power amplifier MMIC fabricated on Qorvo’s 0.15 um GaN on SiC process (QGaN15). It operates within the 10.7 to 12.7 GHz frequency range. The device delivers a saturated output power of 35 watts. This component is designed for high-performance RF applications requiring significant power handling in a compact monolithic microwave integrated circuit form factor.

RF Amplifiers Feature Summary

• Utilizes advanced 0.15 um GaN on SiC technology for robust performance
• Provides high saturated output power capability
• Operates as a wideband amplifier across the specified frequency band

RF Amplifiers Applications

• Radar systems
• Electronic warfare
• Point-to-point communications

RF Amplifiers Procurement Notes

Verify the specific datasheet revision and manufacturing lot details upon ordering. Ensure that the application environment supports the thermal requirements associated with high-power GaN devices. Confirm compatibility with existing RF front-end designs before integration. Cross-reference part numbers carefully to avoid confusion with similar family members.

RF Amplifiers Selection Notes

Select this component when high output power is required in the X-band spectrum. Consider the GaN on SiC process benefits for efficiency and thermal stability. Evaluate system-level impedance matching requirements for optimal performance. Assess packaging constraints as the device is supplied as a die.

RF Amplifiers Part Context

This part belongs to Qorvo’s portfolio of GaN-based power amplifiers. It complements other models like the QPA1003D, which targets lower frequency ranges. The QGaN15 process enables consistent performance across various high-frequency applications. It represents a mature solution for demanding RF environments.

RF Amplifiers Replacement Considerations

No direct public substitute part numbers are confirmed for this specific model. Designers should evaluate functional equivalents based on frequency range and power output specifications. Consult official documentation for potential cross-references.