QPA1011D

RF Amplifiers Overview

The QPA1011D is a gallium nitride (GaN) radio frequency power amplifier designed for operation within the 7.9 to 11 GHz frequency range. It typically delivers 25 watts of saturated output power with a power-added efficiency of 37% and a large-signal gain of 20 dB. The device features a die package measuring 2.75 x 3.12 mm.

RF Amplifiers Feature Summary

• Utilizes GaN technology for high power density
• Provides high saturated output power in millimeter-wave bands
• Optimized for efficient power conversion

RF Amplifiers Applications

• Radar systems
• Point-to-point communication links
• Electronic warfare applications

RF Amplifiers Procurement Notes

Verify component authenticity through authorized Qorvo distribution channels. Confirm that the received die matches the specified dimensions and marking codes. Review export control classifications prior to international procurement, as this product may require specific authorization for shipment from the United States.

RF Amplifiers Selection Notes

Select this component when designing circuits requiring high linearity and power output in the K/Ka-band spectrum. Ensure the application supports surface-mount die attachment methods. Verify that the system architecture can accommodate the required bias conditions and thermal management solutions for GaN devices.

RF Amplifiers Part Context

This part belongs to Qorvo's portfolio of monolithic microwave integrated circuits. It complements other drivers and amplifiers in the QPA series, serving as a final stage power amplifier. The design leverages advanced semiconductor processes to achieve performance metrics suitable for demanding RF environments.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative GaN amplifiers based on frequency range, output power, and package compatibility.