QPA1314D

RF Amplifiers Overview

The QPA1314D is a high-power monolithic microwave integrated circuit (MMIC) amplifier fabricated on Qorvo’s 0.15 µm GaN-on-SiC process (QGaN15). It operates within the 13.75 GHz to 14.5 GHz frequency range, with an extended capability up to 15.35 GHz. The device delivers a typical output power of 55 W and provides approximately 27 dB of large-signal gain. It achieves a power-added efficiency of 30% at a 24 V supply voltage. The component utilizes a 10-lead, 15 mm x 15 mm bolt-down package featuring a copper base for effective thermal management.

RF Amplifiers Feature Summary

• Fabricated using 0.15 µm GaN-on-SiC technology for high power density
• Bolt-down package design with copper base for superior heat dissipation
• Input and output ports matched to 50 Ω for direct integration
• Fully DC and RF tested to ensure electrical specification compliance

RF Amplifiers Applications

• Satellite communication systems in the Ka-band
• Military radar applications
• Commercial point-to-point radio links

RF Amplifiers Procurement Notes

Verify the specific revision and lot traceability upon order confirmation. Confirm that the procurement channel provides original manufacturer packaging to prevent counterfeit components. Ensure the receiving facility has appropriate electrostatic discharge protection protocols during handling. Validate that the delivered units match the requested part number suffixes exactly.

RF Amplifiers Selection Notes

Select this component when high output power and efficiency are required in the 13.75–14.5 GHz band. The bolt-down package necessitates a printed circuit board or chassis designed for direct thermal conduction. Ensure the system bias supplies can deliver the required quiescent current without voltage droop under full load conditions.

RF Amplifiers Part Context

This device belongs to Qorvo’s portfolio of GaN-based power amplifiers designed for demanding RF environments. It serves as a core active element for transmitters requiring significant linear power output. The QGaN15 process technology enables robust performance across wide temperature variations typical in aerospace and defense sectors.

RF Amplifiers Replacement Considerations

No officially confirmed substitute part numbers are available in public documentation. Direct replacements may require redesigning the matching network and thermal interface due to potential differences in pinout and package dimensions.