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The QS5Y2FSTR is a bipolar transistor array manufactured by ROHM Semiconductor, featuring one NPN and one PNP emitter-coupled transistor in a TSMT-5 surface-mount package. It supports a maximum collector-emitter voltage of 50V and continuous collector current of 3A. The device offers gain-bandwidth products of 320MHz for the NPN and 300MHz for the PNP, with power dissipation rated at 1.25W.
Verify the specific suffix FSTR against official ROHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with SMD/SMT assembly processes. Cross-reference the TSMT-5 footprint dimensions with PCB design guidelines. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Select this component when a compact solution for complementary switching or amplification is required. The TSMT-5 package minimizes board space compared to discrete alternatives. Evaluate thermal requirements against the 1.25W dissipation limit. Consider the 50V voltage rating for low-to-medium voltage circuit designs.
This part belongs to the QS5Y series of bipolar transistor arrays from ROHM Semiconductor. These devices are designed for use in consumer electronics and industrial control systems where space efficiency and reliable switching performance are critical. The series provides integrated solutions that simplify circuit design by combining complementary transistors into a single package.
Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific TSMT-5 pinout or electrical characteristics. Verify parameter alignment before replacing.