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The QS8F2TCR is a dual discrete semiconductor component manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It integrates one P-Channel MOSFET and one PNP bipolar junction transistor. The P-Channel MOSFET supports a drain-source voltage of 30V with a continuous current rating of 2A. The PNP transistor handles a collector-emitter voltage of 12V with a continuous current rating of 2.5A. Designed for general-purpose switching applications, the device operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version before integration, as component specifications may vary between manufacturing batches. Confirm that the TSMT-8 footprint matches the target PCB design. Ensure thermal management strategies account for the maximum power dissipation limits defined in the official documentation. Cross-reference pin assignments with the latest manufacturer guidelines to prevent interface mismatches during assembly.
Select this component when a combined P-Channel MOSFET and PNP transistor solution is required in a small form factor. The 30V rating suits low-voltage DC applications. Consider the 2A and 2.5A current limits for load requirements. Verify compatibility with 4V drive logic if applicable to the control circuitry. Evaluate thermal performance under expected operating loads.
This part belongs to ROHM's discrete semiconductor portfolio, specifically within the transistors category. It serves as a specialized dual-transistor unit for space-constrained designs. The TSMT-8 package allows for efficient board layout compared to separate components. ROHM utilizes silicon technology for these devices, ensuring reliability in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the manufacturer's official documentation for recommended alternatives or obsolescence notices. Generic equivalents may differ in electrical characteristics or pinout configuration.