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The QSH29TR is a dual NPN pre-biased bipolar transistor manufactured by ROHM Semiconductor. It integrates biasing circuitry within a compact surface-mount TSMT6 (SC-95) package, designed for digital switching applications. The component features a maximum collector-emitter voltage of 70 V and supports a continuous collector current of 500 mA. With a power dissipation rating of 1.25 W, it offers efficient signal processing capabilities in space-constrained electronic designs.
Verify the specific datasheet version before procurement, as ROHM indicates this product may not be recommended for new designs. Confirm that the TSMT6 package dimensions align with your PCB footprint requirements. Ensure that the 70 V voltage rating and 500 mA current limits meet your application's peak operational demands without exceeding thermal constraints.
Select the QSH29TR when a dual NPN solution with integrated biasing is required to minimize board space. Consider its 1.25 W power dissipation capability for moderate load switching tasks. Evaluate the SC-95 package compatibility against existing manufacturing equipment. Compare performance against standard discrete transistors to assess the benefit of reduced external component usage.
This component belongs to ROHM's series of pre-biased bipolar transistors, which combine transistors and resistors into a single unit. The QSH29TR specifically utilizes the TSMT6 package, offering a compact alternative to discrete resistor-transistor networks. It serves as a specialized solution for digital switching where space efficiency and simplified biasing are critical design factors.
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official ROHM channels or authorized distributors before considering alternatives.