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Product Detailed Parameters
- Description：TRANS 2PNP 12V 1.5A TSMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：1.5A
- Voltage - Collector Emitter Breakdown (Max)：12V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 25mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 200mA, 2V
- Power - Max：1.25W
- Frequency - Transition：400MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSMT6 (SC-95)
- Grade：-
- Qualification：-
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Overview
The QST8TR is a complex transistor comprising two PNP bipolar junction transistors integrated into a single SOT-457T (TSMT6) surface-mount package. It features a collector-emitter voltage of -12V and a continuous collector current of -1.5A per section. The device offers a DC current gain (hFE) range of 270 to 680, with a minimum guaranteed value of 270. Designed for compact power applications, it operates within a storage temperature range of -55°C to 150°C and measures 2.8x2.9mm with a thickness of 1.0mm.
Feature Summary
- Integrates dual PNP transistors in a compact surface-mount footprint
- High current gain capability for efficient signal amplification
- Designed as a small power complex transistor for startup circuits
Applications
- Startup circuits requiring compact power transistor solutions
- General-purpose switching applications in consumer electronics
- Amplifier stages utilizing dual PNP configurations
Procurement Notes
This component is designated as 'Not Recommended for New Designs' and is produced solely to support existing customers. It is not available for new design-in projects. Verification of current availability should be conducted directly with the manufacturer or authorized distributors, as production status may change without public announcement.
Selection Notes
Engineers should consider alternative components for new designs due to the non-recommended status. If replacing this part, ensure the substitute matches the SOT-457T package dimensions and provides comparable hFE ranges and voltage ratings. Verify that the replacement supports the required -1.5A current handling and -12V breakdown specifications.
Part Context
The QST8TR belongs to Rohm Semiconductor's complex transistor lineup, specifically designed to replace discrete dual-transistor arrangements. It serves as a space-saving solution for applications previously using separate PNP devices, such as the 2SB1709 equivalent parts. The TSMT6 package allows for automated surface-mount assembly.
Replacement Considerations
The datasheet lists 2SB1709 as an equivalent single-part reference. However, since the QST8TR is a dual PNP complex transistor, a direct functional replacement requires another dual PNP device or two discrete PNP transistors matching the -12V/-1.5A/270-680hFE specifications.
