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The QSZ1TR is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, featuring one NPN and one PNP emitter-coupled transistor in a TSMT-5 surface-mount package. It supports a maximum collector-emitter voltage of 15 V and a continuous collector current of 2 A. The device offers a gain-bandwidth product of 360 MHz and a maximum power dissipation of 500 mW. Designed for high-speed applications, it operates within a temperature range up to +150°C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure compatibility with required packaging options such as cut tape or reel quantities. Confirm that the component status remains active for new production designs. Cross-reference the RoHS compliance details provided in the technical documentation to meet environmental regulatory standards for your target market.
Select this component when a matched pair of NPN and PNP transistors is required for differential signaling or push-pull configurations. The 2 A current rating and 15 V voltage limit define its operational boundaries. Ensure the thermal management strategy accounts for the 500 mW power dissipation capability in the specified TSMT-5 package footprint.
This part belongs to ROHM Semiconductor's lineup of discrete bipolar transistor arrays. These components are engineered to replace multiple individual transistors, reducing board space and parasitic effects. The emitter-coupled design is standard for applications requiring precise matching between complementary devices in analog and digital interfaces.
Consult the official ROHM replacement guide for direct equivalents. Verify pinout compatibility and electrical parameters before substituting with other dual BJT arrays from different manufacturers.