QSZ1TR

QSZ1TR

$0.18
  • Description:TRANS NPN/PNP 15V 2A TSMT5
  • Series:-

SKU:766061ee66f5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 15V 2A TSMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max):2A
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Vce Saturation (Max) @ Ib, Ic:180mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 200mA, 2V
  • Power - Max:500mW
  • Frequency - Transition:360MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package:TSMT5
  • Grade:-
  • Qualification:-

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QSZ1TR

Overview

The QSZ1TR is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, featuring one NPN and one PNP emitter-coupled transistor in a TSMT-5 surface-mount package. It supports a maximum collector-emitter voltage of 15 V and a continuous collector current of 2 A. The device offers a gain-bandwidth product of 360 MHz and a maximum power dissipation of 500 mW. Designed for high-speed applications, it operates within a temperature range up to +150°C junction temperature.

Feature Summary

  • Integrates complementary NPN and PNP transistors in an emitter-coupled configuration for efficient signal processing.
  • Provides high-speed switching capabilities with a 360 MHz gain-bandwidth product suitable for RF and logic circuits.
  • Utilizes a compact TSMT-5 surface-mount package to facilitate automated assembly and space-constrained designs.

Applications

  • Signal amplification stages
  • Logic driver circuits
  • Discrete switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure compatibility with required packaging options such as cut tape or reel quantities. Confirm that the component status remains active for new production designs. Cross-reference the RoHS compliance details provided in the technical documentation to meet environmental regulatory standards for your target market.

Selection Notes

Select this component when a matched pair of NPN and PNP transistors is required for differential signaling or push-pull configurations. The 2 A current rating and 15 V voltage limit define its operational boundaries. Ensure the thermal management strategy accounts for the 500 mW power dissipation capability in the specified TSMT-5 package footprint.

Part Context

This part belongs to ROHM Semiconductor's lineup of discrete bipolar transistor arrays. These components are engineered to replace multiple individual transistors, reducing board space and parasitic effects. The emitter-coupled design is standard for applications requiring precise matching between complementary devices in analog and digital interfaces.

Replacement Considerations

Consult the official ROHM replacement guide for direct equivalents. Verify pinout compatibility and electrical parameters before substituting with other dual BJT arrays from different manufacturers.

QSZ1TRQSZ1TR
$0.18
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