QSZ4TR

Overview

The QSZ4TR is a surface-mount NPN+PNP complementary transistor pair housed in a TSMT5 package. It features a collector-emitter voltage of 30V for the NPN side and -30V for the PNP side, with continuous collector currents of 2A and -2A respectively. The device offers a high DC current gain (hFE) ranging from 270 to 680. Designed for compact power applications, it operates within a storage temperature range of -55°C to 150°C and measures 2.8x2.9mm with a thickness of 1.0mm.

Feature Summary

• Integrated NPN and PNP complementary transistors in a single compact package
• High current gain capability suitable for power amplification
• Designed specifically for small-sized DC-DC converters

Applications

• DC-DC converter circuits
• Small-sized power composite transistor applications

Procurement Notes

Verify component authenticity through authorized ROHM Semiconductor distributors or direct manufacturer channels. Confirm RoHS compliance status and check for the NRND (Not Recommended for New Designs) designation before procurement. Ensure the TSMT5 package type matches the target PCB footprint requirements.

Selection Notes

Select this component when a compact NPN/PNP pair is required for power switching applications. Verify that the 30V voltage rating and 2A current capacity meet circuit demands. Consider the TSMT5 package dimensions for space-constrained designs requiring surface mount technology.

Part Context

The QSZ4TR belongs to ROHM's line of complementary transistor pairs designed for power management. It serves as an alternative to discrete dual-transistor solutions, offering reduced board space and simplified assembly for power conversion circuits.

Replacement Considerations

The BD5233G-1 is listed as a similar level replacement option. Verify pin compatibility and electrical specifications before substitution.