R0577YC12C

R0577YC12C

$167.88
  • Description:SCR 1.2KV 1169A W58
  • Series:-

SKU:ce9645e797da Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:SCR 1.2KV 1169A W58
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Voltage - Off State:1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max):3 V
  • Current - Gate Trigger (Igt) (Max):200 mA
  • Current - Hold (Ih) (Max):1:00 AM
  • Current - Non Rep. Surge 50, 60Hz (Itsm):6600A @ 50Hz
  • SCR Type:Standard Recovery
  • Operating Temperature:-40°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:TO-200AB, B-PuK
  • Supplier Device Package:W58
  • Voltage - On State (Vtm) (Max):2.15 V
  • Current - On State (It (AV)) (Max):577 A
  • Current - On State (It (RMS)) (Max):1169 A
  • Current - Off State (Max):60 mA

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R0577YC12C

Overview

The IXYS R0577YC12C is a silicon rectifier diode designed for high-voltage power conversion applications. It features a peak repetitive reverse voltage (Vrrm) of 1200 V and a maximum average forward rectified current (Io) of 5 A. The device utilizes a DO-201AD axial leaded package, ensuring robust mechanical mounting. Key electrical characteristics include a maximum RMS isolation voltage of 4 kV and a low forward voltage drop of 1.3 V at rated current. The component supports a peak non-repetitive surge current of 100 A and operates within a junction temperature range of -40°C to +175°C, providing reliable performance in demanding industrial environments.

R0577YC12CR0577YC12C
$167.88
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