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R0830LC12D
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Product Detailed Parameters
- Description：SCR 1.2KV 1713A W10
- Series：-
- Mfr：IXYS
- Package：Box
- Voltage - Off State：1.2 kV
- Voltage - Gate Trigger (Vgt) (Max)：3 V
- Current - Gate Trigger (Igt) (Max)：300 mA
- Current - Hold (Ih) (Max)：1:00 AM
- Current - Non Rep. Surge 50, 60Hz (Itsm)：9350A @ 50Hz
- SCR Type：Standard Recovery
- Operating Temperature：-40°C ~ 125°C
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：TO-200AB, B-PuK
- Supplier Device Package：W10
- Voltage - On State (Vtm) (Max)：2.4 V
- Current - On State (It (AV)) (Max)：830 A
- Current - On State (It (RMS)) (Max)：1713 A
- Current - Off State (Max)：70 mA
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Overview
The R0830LC12D is a high-power IGBT module manufactured by IXYS, designed for demanding industrial and traction applications. It integrates four IGBTs with anti-parallel diodes in a compact package. The device features a maximum collector-emitter voltage of 1200V and a continuous collector current of 830A at 25°C. Key electrical parameters include a saturation voltage of approximately 2.4V and a reverse recovery charge of 16µC. The module utilizes an insulated baseplate for thermal management and electrical isolation, ensuring reliable operation under high-stress conditions typical in motor drives and power conversion systems.
Feature Summary
- High current density capability for efficient power handling
- Integrated fast recovery diodes for improved switching performance
- Insulated baseplate design for enhanced thermal dissipation and safety
Applications
- Industrial motor drives and inverters
- Traction converters for electric vehicles
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix code on the component label to ensure exact matching of pinout configuration and terminal plating specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet revision numbers to validate parameter consistency against current production batches.
Selection Notes
Select this module based on its 1200V blocking voltage and 830A current rating suitability for high-power applications. Evaluate thermal resistance characteristics against the system's cooling infrastructure requirements. Ensure gate drive voltage levels align with the specified operating range to maintain optimal switching performance and prevent device damage.
Part Context
This component belongs to IXYS' high-power IGBT module portfolio, engineered for robust performance in heavy-duty environments. The series is characterized by advanced silicon technology aimed at reducing conduction and switching losses. It serves as a critical power semiconductor solution for modern energy conversion architectures requiring high reliability and efficiency.
Replacement Considerations
Direct replacements must match the 1200V/830A specification and physical footprint. Verify pin compatibility and thermal interface dimensions before substitution. Consult official cross-reference lists for approved alternatives with identical electrical characteristics.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (Vceo) is rated at 1200V.
How many IGBTs are integrated in this module?
The module contains four independent IGBTs with integrated anti-parallel diodes.
What is the continuous collector current at 25°C?
The continuous collector current (Ic) is 830A at a case temperature of 25°C.
