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R1LV0108ESN-5SI#S1 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 1MBIT PARALLEL 32SOP. Review the specifications below when checking this part for your BOM.
Memory IC specifications for R1LV0108ESN-5SI#S1
- Description：IC SRAM 1MBIT PARALLEL 32SOP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM
- Memory Size：1Mbit
- Memory Organization：128K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：32-SOIC (0.450", 11.40mm Width)
- Supplier Device Package：32-SOP
- Access Time：55 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for R1LV0108ESN-5SI#S1
Memory IC Overview
The R1LV0108ESN-5SI#S1 is a 1Mbit (128K x 8) parallel SRAM manufactured by Renesas Electronics. It operates within a supply voltage range of 2.7V to 3.6V and features an access time of 55ns. The device utilizes a 32-pin TSOP I surface-mount package and supports an operating temperature range from -40°C to +85°C. Classified as low-power static random-access memory, it is designed for applications requiring reliable data retention in volatile storage environments.
Memory IC Feature Summary
- Provides high-speed parallel data access with a 55ns cycle time
- Operates on a single 3.3V nominal power supply
- Utilizes a compact 32-pin thin small-outline package for space-constrained designs
Memory IC Applications
- Industrial control systems
- Consumer electronics devices
- Embedded computing modules
Memory IC Procurement Notes
Verify the specific suffix designation against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Confirm current lifecycle status, as this component may be subject to end-of-life notices or production changes. Ensure that the selected packaging format matches the intended assembly process requirements.
Memory IC Selection Notes
Select this component when a 1Mbit capacity with 55ns speed is required under 3.3V logic levels. Compare against alternative packages if board space constraints differ. Validate thermal performance within the specified industrial temperature range during system integration.
Memory IC Part Context
This part belongs to the R1LV0108E series of low-power SRAMs from Renesas. The series offers various speed grades and package options to support diverse embedded memory needs. It represents a standard solution for general-purpose volatile storage in mid-range electronic applications.
Memory IC Replacement Considerations
Infineon Technologies CY62128EV30LL-45SXIT is listed as a potential substitute. Verify functional equivalence regarding voltage ranges and timing parameters before implementation.
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