R1RP0416DGE-2PI#B0

Memory IC Overview

The R1RP0416DGE-2PI#B0 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It utilizes CMOS process technology with 6-transistor memory cells to achieve a maximum access time of 12 ns. The device operates on a single 5.0 V supply (±10%) and supports an operating temperature range from −40°C to +85°C. It features TTL-compatible inputs and outputs, with a maximum operating current of 160 mA and standby currents of 40 mA or 5 mA depending on the mode.

Memory IC Feature Summary

• High-speed data access utilizing advanced CMOS circuit design
• TTL-compatible logic levels for direct interface compatibility
• Independent upper and lower byte select capabilities

Memory IC Applications

• System cache memory
• Buffer memory applications
• High-density wide bit width configurations

Memory IC Procurement Notes

Verify the specific suffix B0 against official Renesas documentation to confirm manufacturing origin and material composition details. Confirm that the SOJ package variant matches the required mechanical footprint for the target PCB layout. Ensure compliance with RoHS directives and environmental regulations applicable to the deployment region before finalizing procurement.

Memory IC Selection Notes

Select this component when a 16-bit data bus width and fast random access are required within a standard 5V logic environment. The wide industrial temperature range makes it suitable for demanding operational conditions. Verify that the system power budget accommodates the specified maximum operating current during active read/write cycles.

Memory IC Part Context

This part belongs to the R1RP0416DI Series, which includes variants in both plastic SOJ and TSOP II packages. The series represents a generation of static RAMs designed to replace older technologies by offering higher density and faster speeds within a compatible pinout form factor for legacy system upgrades.

Memory IC Replacement Considerations

R1RP0416DSB-2PI#B0