Memory IC R1RP0416DSB-0PI#D1 product image

R1RP0416DSB-0PI#D1

$4.92
  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:9a303f85e73a Category: Brand:

  
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R1RP0416DSB-0PI#D1 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4MBIT PARALLEL 44TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for R1RP0416DSB-0PI#D1

  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for R1RP0416DSB-0PI#D1

R1RP0416DSB-0PI#D1

Memory IC Overview

The R1RP0416DSB-0PI#D1 is a 4 Mbit asynchronous static random access memory organized as 256 k x 16. It features a 10 ns access time and operates within a supply voltage range of 4.5 V to 5.5 V. The maximum power supply current is 170 mA. Designed for surface mount installation, it utilizes a 44-pin TSOP-II package with dimensions of 18 mm by 10 mm by 1.2 mm. The component supports an operating temperature range from -40°C to +85°C and carries a Moisture Sensitivity Level of 3.

Memory IC Feature Summary

  • Employs CMOS process technology with 6-transistor memory cells to achieve high-speed data access.
  • Provides wide bit width configuration suitable for high-density memory requirements.
  • Designed for applications requiring fast cache and buffer memory operations.

Memory IC Applications

  • System cache memory
  • High-speed buffer memory
  • Embedded systems requiring wide data bus interfaces

Memory IC Procurement Notes

Verify the specific suffix D1 against the manufacturer datasheet to confirm assembly site and material composition changes. Confirm end-of-life status and lead times with authorized distributors. Ensure ESD handling protocols are followed due to moisture sensitivity level 3 classification. Validate pin compatibility with existing PCB footprints before integration.

Memory IC Selection Notes

Select this component when a 16-bit wide interface and 10 ns speed are required for 5V logic systems. Compare against the 12 ns variant if lower cost or different availability is prioritized over speed. Ensure the design accommodates the 44-pin TSOP-II footprint and thermal dissipation needs associated with the specified current consumption levels.

Memory IC Part Context

This part belongs to the R1RP0416D series of high-speed SRAMs manufactured by Renesas Electronics. The series offers 4 Mbit density in a 256K x 16 organization. Variants exist with different access times and packaging options, including SOJ and TSOP-II formats, catering to various industrial and commercial embedded memory needs.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with Infineon CY7C1041G-10ZSXI only if electrical parameters and pinouts are manually validated against the official datasheet.

R1RP0416DSB-0PI#D1R1RP0416DSB-0PI#D1
$4.92
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