R1RP0416DSB-2LR#B0

Memory IC Overview

The R1RP0416DSB-2LR#B0 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It utilizes CMOS process technology with 6-transistor memory cells to achieve a maximum access time of 12 ns. The device operates on a single 5.0 V supply (4.5 V to 5.5 V) and features TTL-compatible inputs and outputs. It is housed in a 44-pin plastic TSOP II package.

Memory IC Feature Summary

• Provides high-speed parallel data access with equal read cycle and access times.
• Operates completely statically without requiring external clock or timing strobes.
• Supports independent upper and lower byte selection for flexible data handling.
• Includes low power standby mode with guaranteed data retention at reduced voltage.

Memory IC Applications

• Cache memory systems
• Buffer memory applications
• High-density memory configurations

Memory IC Procurement Notes

Verify the specific ordering suffix against official Renesas documentation, as it dictates package type and electrical characteristics. Confirm current product status and availability directly with authorized distributors or sales offices prior to procurement. Ensure compliance with export control regulations and environmental directives applicable to your region.

Memory IC Selection Notes

Select this component when a wide 16-bit data bus and fast parallel access are required. It is suitable for designs needing direct TTL compatibility and simple asynchronous control logic. Consider the L-version suffix if low power standby and data retention capabilities are necessary for the application.

Memory IC Part Context

This part belongs to the R1RP0416D Series, which includes variants in both SOJ and TSOP II packages. The series is designed for applications demanding high speed and high density within a standard SRAM architecture. It represents a legacy product line from Renesas Technology Corporation, now under Renesas Electronics Corporation.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: CY7C1041G-10ZSXI

Memory IC FAQ

What is the organization of the memory array?

The memory is organized as 256-kword by 16-bit.

How does the device handle byte selection?

It uses separate Upper Byte (UB#) and Lower Byte (LB#) select pins to independently enable reading or writing to either half of the 16-bit word.