R2N2920A

Overview

The R2N2920A is a dual NPN small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a maximum collector current of 30mA. The device has a maximum power dissipation rating of 350mW. It is housed in a TO-78-6 metal can package, designed for through-hole mounting applications requiring reliable switching or amplification performance within these electrical limits.

Feature Summary

• Dual NPN configuration within a single package
• Small-signal operation capability
• Metal can construction for durability

Applications

• General-purpose switching circuits
• Signal amplification stages
• Logic interface applications

Procurement Notes

Verify the specific manufacturer lot and date code upon receipt to ensure component authenticity. Confirm that the TO-78-6 package dimensions match your PCB footprint requirements. Ensure storage conditions comply with moisture sensitivity levels if applicable. Check for any lead-free compliance documentation required by your manufacturing process standards.

Selection Notes

Select this component when a dual NPN configuration is required in a compact metal can package. Consider the 60V voltage rating and 30mA current limit against circuit demands. Evaluate thermal management needs given the 350mW power dissipation constraint. Compare against other dual BJT options if higher current or different packaging is necessary.

Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically focusing on bipolar transistors. The R2N2920A serves as a dual variant, offering two NPN transistors in one unit. It complements single-transistor offerings by providing space savings in designs requiring multiple identical switching elements.

Replacement Considerations

The JAN2N2920 is a public confirmed substitute part number. Verify pinout compatibility and electrical parameter equivalence before substitution.