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The RB085T-60 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for through-hole mounting in the TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average forward current rating of 10 A. The device exhibits a typical forward voltage of 580 mV at specified conditions and supports a forward surge current of 100 A. Operating temperatures reach up to +150°C, with a maximum reverse leakage current of 300 µA.
Verify component status as NRND (Not Recommended for New Designs) before procurement. Confirm availability through authorized distributors as stock may be limited. Ensure ordering suffixes match specific packaging requirements such as bulk quantities. Validate RoHS compliance documentation against current regulatory standards prior to integration into final assemblies.
Select this component for applications requiring high current handling in a through-hole format. Compare forward voltage specifications against thermal management capabilities. Evaluate reverse leakage current limits under maximum operating temperature conditions. Consider package thermal resistance when designing heat dissipation solutions for continuous 10 A operation.
This part belongs to the RB085T series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and configurations optimized for power conversion. The TO-220FN-3 package provides robust mechanical stability and efficient heat transfer compared to smaller surface-mount alternatives.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' equivalents.