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The RB088BM-30FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) package. The device supports an average rectified forward current of 10 A and a repetitive reverse voltage of 30 V. Key electrical parameters include a maximum forward voltage of 720 mV at 5 A and a maximum reverse leakage current of 3 µA at 30 V. It is qualified to AEC-Q101 standards for automotive reliability and operates at junction temperatures up to 175 °C.
Verify the specific ordering suffix against official ROHM documentation to confirm tape-and-reel packaging quantities and lead times. Ensure the component meets RoHS directives and REACH SVHC requirements for your target market. Cross-reference the datasheet revision date to confirm the availability of updated electrical characteristics and mechanical drawings before finalizing procurement specifications.
Select this component when a 10 A Schottky diode with low reverse leakage is required in a TO-252 package. The 175 °C junction temperature rating allows for operation in thermally constrained environments compared to standard 150 °C devices. Verify that the 30 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements to ensure adequate safety margins during transient conditions.
This part belongs to the RB088 series of ultra-low IR Schottky barrier diodes from ROHM. The series is engineered for efficiency in power conversion applications. The BM variant specifically denotes the TO-252 (DPAK) surface-mount package, distinguishing it from other form factors within the same electrical family while maintaining consistent semiconductor performance characteristics.
The RB088BM-30FHHTL is listed as a recommended replacement with identical pinout and package dimensions. Verify that the HTL suffix does not alter functional parameters or packaging specifications before substitution.