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The RB088BM-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a 30 V reverse voltage rating and a 10 A average forward current capability. Key electrical parameters include a maximum forward voltage of 720 mV at 5 A, a low reverse leakage current of 3 µA, and a non-repetitive peak forward surge current of 50 A. The device supports a maximum operating junction temperature of +150 °C.
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm current availability status and lead times before finalizing procurement plans.
Select this component when a dual-diode arrangement in a compact SMD package is required. The TO-252-3 footprint offers robust thermal performance compared to smaller packages. Consider the 30 V rating and 10 A current capacity to ensure adequate headroom for the specific circuit design requirements.
This component belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by super low reverse leakage current and fast switching capabilities. The RB088BM-30TL specifically targets applications requiring reliable rectification in space-constrained designs.
Check for direct substitutes within the same series, such as the RB088BM-40TL for higher voltage ratings. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers or different package types.