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The RB088BM-40TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 45 V and an average forward current rating of 10 A. The device exhibits a maximum forward voltage of 770 mV at 5 A and a low reverse leakage current of 3 µA at 40 V. It supports a non-repetitive peak forward surge current of 50 A and operates at junction temperatures up to +150 °C.
Verify the supply status carefully as this component is marked as obsolete or not recommended for new designs. Confirm availability through authorized distributors for existing production support. Ensure the ordering suffix matches the required tape and reel quantity. Check for RoHS compliance documentation before finalizing procurement orders.
Select this part for high-current applications requiring low forward voltage drop in a DPAK package. Consider the RB088BGE-40TL as a pin-compatible alternative if higher reliability standards are needed. Evaluate thermal management requirements given the 10 A current rating and 150 °C junction limit. Verify that the 45 V reverse voltage rating exceeds the circuit's peak inverse voltage.
This component belongs to the RB088 series of super low IR Schottky barrier diodes designed for switching power supply applications. The series offers various voltage ratings and packaging options, including automotive-grade variants. The RB088BM-40TL specifically targets general-purpose rectification needs where low conduction loss and compact surface-mount form factors are prioritized.
The RB088BGE-40TL is a recommended replacement with the same pinout and package.