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Product Detailed Parameters
- Description：DIODE ARRAY SCHOT 60V 10A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 µA @ 60 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB088BM-60FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 60V and an average rectified forward current of 10A per diode. Key electrical parameters include a maximum forward voltage of 0.83V at 5A and a maximum reverse leakage current of 3mA at 60V. It operates with a junction temperature range up to 175°C and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Ultra-low reverse leakage current characteristics achieved through blocking metal technology
- High thermal stability suitable for operation in elevated temperature environments
- Automotive-grade reliability compliant with AEC-Q101 standards
Applications
- Switching power supplies requiring low loss rectification
- Automotive electronic circuits demanding high reliability
- Industrial equipment operating in high-temperature conditions
Procurement Notes
Verify the specific suffix 'TL' indicates tape and reel packaging when ordering. Confirm that the component meets RoHS directives and REACH SVHC requirements for your region. Ensure the design accounts for the 175°C maximum junction temperature rating during thermal management planning. Cross-reference the JEITA package code SC-63 for accurate footprint implementation.
Selection Notes
Select this component for designs requiring a dual common cathode Schottky diode in a DPAK package. It serves as a direct replacement for standard FRDs where lower forward voltage and reduced heat generation are critical. Consider the 175°C junction temperature capability for harsh environment deployments. Verify that the 60V reverse voltage rating provides sufficient margin for the target circuit's peak inverse voltage.
Part Context
This part belongs to the RBxx8 series of Schottky barrier diodes from ROHM Semiconductor. The series utilizes blocking metal technology to suppress reverse leakage current, addressing thermal runaway risks common in standard SBDs. This allows safe operation in high-temperature automotive and industrial applications where traditional Schottky diodes might fail.
Replacement Considerations
RB088NS200 offers similar performance but in a TO-263 package with higher voltage ratings. RB088BM100FHTL provides identical packaging and configuration with a 100V reverse voltage rating.
