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The RB088BM150FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (DPAK) surface-mount package. The device supports a repetitive peak reverse voltage of 150 V and an average rectified forward current of 10 A per diode. Key electrical parameters include a maximum forward voltage of 0.88 V at 5 A, a maximum reverse current of 15 μA at 150 V, and a peak forward surge current rating of 50 A. The component operates within a junction temperature range up to 175 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the intended application environment falls within standard operating conditions as defined by the manufacturer. Ensure proper handling precautions are implemented due to electrostatic sensitivity. Validate thermal management designs to maintain junction temperatures within specified limits during operation.
Select this component for applications requiring high-speed switching with low forward voltage drop. The TO-252 package provides efficient thermal dissipation capabilities suitable for surface-mount assembly processes. Consider the dual common cathode structure for bridge or synchronous rectification topologies where space constraints exist.
This part belongs to the RB088BM series of Schottky barrier diodes designed for general-purpose and automotive-grade electronics. The series emphasizes low reverse current characteristics to minimize power loss in high-frequency switching environments. The TO-252 form factor allows for robust mounting on printed circuit boards while maintaining compact system footprints.
RB088BM150FHTL
The maximum junction temperature is 175 °C.
The device utilizes a cathode common dual type configuration.
The typical forward voltage is 0.78 V when tested at a forward current of 5 A.