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The RB088BM150TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 150 V and an average rectified forward current rating of 10 A. The device exhibits a maximum forward voltage of 780 mV at 5 A and a low reverse leakage current of 15 uA. It supports a non-repetitive peak forward surge current of 50 A and operates at junction temperatures up to +150 C.
Verify the specific suffix TL against official ROHM documentation to confirm reel packaging and tape specifications. Ensure the component meets AEC-Q101 automotive qualification requirements if intended for vehicle electronics. Cross-reference the manufacturer part number with authorized distributor catalogs to validate current production status and compliance with RoHS directives before finalizing procurement orders.
Select this component when a dual-diode arrangement in a compact SMD footprint is required for high-current applications. The TO-252-3 package provides robust thermal performance compared to smaller alternatives. Consider the 150 V rating and 10 A continuous current capability to ensure adequate headroom for system voltage spikes and load variations during operation.
This device belongs to the RB088 series of Schottky barrier diodes designed for high-efficiency power conversion. The series emphasizes low forward voltage drop and minimal reverse leakage to reduce power loss. The TO-252-3 form factor allows for direct mounting on printed circuit boards while maintaining thermal stability under sustained load conditions.
RB088BM150FHTL offers identical pinout and electrical characteristics within the same package family.