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The RB088BM200FHTL is a dual Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a common cathode configuration with silicon technology. Key electrical parameters include a maximum repetitive reverse voltage of 200 V and an average forward rectified current of 10 A per diode. The device exhibits a maximum forward voltage of 880 mV at 5 A and a maximum reverse leakage current of 7 µA at 200 V. It supports a surge forward current of 100 A and operates at junction temperatures up to +150°C. The component holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix FHTL against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Confirm that the component status aligns with project requirements, as certain variants may carry non-recommended-for-new-designations. Ensure compliance with RoHS directives and REACH SVHC regulations prior to integration into final assemblies.
Select this component when a dual Schottky diode with 200 V blocking capability and 10 A continuous current rating is required in a DPAK package. Consider the low forward voltage drop for efficiency optimization and the AEC-Q101 certification for automotive deployment. Evaluate thermal management needs based on the 150°C junction temperature limit and package thermal resistance characteristics.
This part belongs to the RB088 series of ultra-low IR Schottky barrier diodes from ROHM Semiconductor. The series includes various voltage ratings and package options, such as the RB088NS200FHTL in a TO-263-3 package. The RB088BM200FHTL specifically targets applications requiring robust automotive-grade performance in a compact surface-mount form factor.
The RB088BM200TL is listed as a similar level replacement with the same pinout and package. Verify functional equivalence and availability status before substitution.