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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 200V 10A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：7 µA @ 200 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB088BM200TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 200 V and an average forward current rating of 10 A. The device exhibits a maximum forward voltage of 880 mV at 5 A and a low reverse leakage current of 7 µA at 200 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Feature Summary
- Utilizes super low reverse leakage current technology for improved efficiency
- Dual anode common cathode configuration enables flexible circuit integration
- Designed for high-temperature operation suitable for power supply applications
Applications
- Switching power supplies
- Freewheeling diodes
- Reverse polarity protection circuits
Procurement Notes
Verify the lifecycle status before procurement, as this component may be marked as not recommended for new designs. Confirm that the TO-252-3 package dimensions align with existing PCB footprints. Ensure thermal management strategies accommodate the specified maximum junction temperature limits during operation.
Selection Notes
Select this component when a 200 V blocking capability and 10 A continuous current are required in a compact SMD form factor. Consider the specific forward voltage drop characteristics for efficiency calculations. Verify compatibility with automated assembly processes given the reel packaging options available for this series.
Part Context
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of blocking metal technology to suppress reverse leakage current, addressing thermal runaway risks in high-temperature environments. This specific model represents the standard non-automotive grade variant in the TO-252 package.
Replacement Considerations
The RB088BM200FNS is listed as a similar level replacement with the same pinout and package. Verify electrical parameter equivalence and lifecycle status before substitution.
