RB088NS-30TL

Overview

The RB088NS-30TL is a Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a silicon construction. Key electrical parameters include a maximum repetitive reverse voltage of 35 V and a continuous forward current rating of 10 A. The device exhibits a low forward voltage of 720 mV at 5 A and a minimal reverse leakage current of 3 uA at 30 V. It supports a peak forward surge current of 50 A and operates within a junction temperature range up to +150 °C.

Feature Summary

• Dual anode common cathode configuration for efficient circuit design
• Super low reverse leakage current characteristics
• High thermal stability suitable for elevated operating temperatures

Applications

• Switching power supplies
• Automotive electronic circuits
• General-purpose rectification

Procurement Notes

Verify the specific suffix TL against official datasheets to confirm reel packaging specifications. Ensure compatibility with TO-263S footprint requirements during PCB layout. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.

Selection Notes

Select this component when low reverse leakage and high-temperature reliability are critical. The TO-263S package provides robust thermal dissipation for 10 A applications. Consider the 30 V reverse voltage rating relative to system peak voltages to ensure adequate safety margins under transient conditions.

Part Context

This part belongs to the RB088NS series of Schottky barrier diodes designed for super low reverse leakage performance. The series utilizes blocking metal technology to mitigate thermal runaway risks in high-temperature environments. It serves as a high-reliability alternative to standard fast recovery diodes in power conversion applications.

Replacement Considerations

RB088NS-30FH is an automotive-grade variant within the same series offering AEC-Q101 qualification.