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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 150V 10A LPDS
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：880 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：15 µA @ 150 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：LPDS
- Grade：-
- Qualification：-
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Overview
The RB088NS150TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-263-3 (D2PAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 10 A. Key electrical parameters include a maximum forward voltage of 780 mV at 5 A, a peak forward surge current of 50 A, and a maximum reverse current of 15 µA. It operates at junction temperatures up to +150 °C and holds AEC-Q101 qualification.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Low reverse leakage current characteristics
- High reliability construction suitable for demanding environments
- Automotive-grade AEC-Q101 qualification
Applications
- Switching power supplies
- Computer systems
- Mobile phones
- Portable electronic devices
Procurement Notes
Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging and quantity specifications. Ensure the TO-263-3 footprint matches the target PCB layout. Confirm AEC-Q101 compliance requirements if the application involves automotive standards. Cross-reference thermal resistance values with system heat dissipation capabilities.
Selection Notes
Select this component when a low forward voltage drop and high surge current capability are required in a compact surface-mount form factor. The dual anode structure allows for flexible bridge or synchronous rectifier configurations. Consider the 150 V rating relative to input voltage spikes. Evaluate thermal management needs given the 10 A continuous current rating in the D2PAK package.
Part Context
This part belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and low reverse current. The RB088NS150TL specifically utilizes the TO-263S (D2PAK) package variant, distinguishing it from other series members that may use different housing styles or current ratings.
Replacement Considerations
RB088NS150FH is listed as an alias for this component. Verify pinout compatibility and thermal performance before substituting with other 150V 10A dual Schottky diodes from different manufacturers.
