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The RB088T-30HZC9 is a silicon epitaxial planar Schottky barrier diode from ROHM Semiconductor, qualified under the AEC-Q101 standard for automotive applications. It features a cathode common dual configuration housed in a TO-220FN package with three terminals. The device supports a repetitive peak reverse voltage of 35V and a continuous reverse voltage of 30V. It provides an average rectified forward current of 10A per diode at a case temperature of 130°C, with a non-repetitive surge current rating of 50A. Key electrical characteristics include a maximum forward voltage of 0.72V at 5A and a super low reverse current of 3µA at 30V.
Verify the specific ordering suffix C9 against official ROHM documentation to confirm packaging details and compliance status. Ensure that the component meets the required AEC-Q101 qualification standards for your target application. Cross-reference the datasheet revision date to confirm the accuracy of thermal and electrical parameters before finalizing procurement specifications.
Select this component when a robust, automotive-grade Schottky diode with high current capacity is required. The TO-220FN package facilitates effective heat dissipation for high-power switching applications. Consider the 150°C maximum junction temperature and the specific thermal resistance values when designing the cooling system for the circuit board.
This part belongs to the RB088T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for high reliability and low reverse current applications. The RB088T-30HZ variant specifically targets automotive electronics requiring AEC-Q101 compliance and robust performance in switching power supply circuits.
Consult the official ROHM datasheet or contact sales representatives to identify verified substitute part numbers. Do not assume compatibility based on similar package types or general electrical ratings without explicit manufacturer confirmation.
The maximum operating junction temperature (Tj) is 150°C.
The RB088T-30HZC9 is a cathode common dual type Schottky barrier diode.
The thermal resistance Rth(j-c) is 2°C/W.