RB088T-30HZC9

RB088T-30HZC9

$1.75
  • Description:DIODE ARR SCHOTT 30V 5A TO-220FN
  • Series:-

SKU:f4ded247c049 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARR SCHOTT 30V 5A TO-220FN
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:720 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 µA @ 30 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Grade:Automotive
  • Qualification:AEC-Q101

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RB088T-30HZC9

Overview

The RB088T-30HZC9 is a silicon epitaxial planar Schottky barrier diode from ROHM Semiconductor, qualified under the AEC-Q101 standard for automotive applications. It features a cathode common dual configuration housed in a TO-220FN package with three terminals. The device supports a repetitive peak reverse voltage of 35V and a continuous reverse voltage of 30V. It provides an average rectified forward current of 10A per diode at a case temperature of 130°C, with a non-repetitive surge current rating of 50A. Key electrical characteristics include a maximum forward voltage of 0.72V at 5A and a super low reverse current of 3µA at 30V.

Feature Summary

  • Cathode common dual type configuration
  • High reliability construction suitable for automotive environments
  • Super low reverse leakage current

Applications

  • Switching power supplies

Procurement Notes

Verify the specific ordering suffix C9 against official ROHM documentation to confirm packaging details and compliance status. Ensure that the component meets the required AEC-Q101 qualification standards for your target application. Cross-reference the datasheet revision date to confirm the accuracy of thermal and electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component when a robust, automotive-grade Schottky diode with high current capacity is required. The TO-220FN package facilitates effective heat dissipation for high-power switching applications. Consider the 150°C maximum junction temperature and the specific thermal resistance values when designing the cooling system for the circuit board.

Part Context

This part belongs to the RB088T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for high reliability and low reverse current applications. The RB088T-30HZ variant specifically targets automotive electronics requiring AEC-Q101 compliance and robust performance in switching power supply circuits.

Replacement Considerations

Consult the official ROHM datasheet or contact sales representatives to identify verified substitute part numbers. Do not assume compatibility based on similar package types or general electrical ratings without explicit manufacturer confirmation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is 150°C.

How is the device configured internally?

The RB088T-30HZC9 is a cathode common dual type Schottky barrier diode.

What is the thermal resistance from junction to case?

The thermal resistance Rth(j-c) is 2°C/W.

RB088T-30HZC9RB088T-30HZC9
$1.75
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