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The RB088T150FH is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for automotive applications under the AEC-Q101 standard. It features a dual anode common cathode configuration housed in a TO-220FN (3-pin) leaded package. Key electrical parameters include a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 0.88 V at 5 A and a maximum reverse current of 15 mA at 150 V. It supports a junction temperature up to 150 °C and offers high reliability with low leakage characteristics.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific part number matches the required AEC-Q101 qualification status. Ensure the TO-220FN package dimensions align with the target PCB footprint. Check for any supersession notices regarding newer tape-and-reel variants if automated assembly is planned.
Select this component when a leaded, dual-diode solution is required for automotive environments. The TO-220FN package provides robust thermal performance compared to surface-mount alternatives. Consider the 150 V rating and 10 A current capacity against system requirements. Evaluate the higher reverse current specification relative to ultra-low leakage SMD options if leakage sensitivity is critical.
This component belongs to the RB088 series of Schottky barrier diodes optimized for automotive use. The series includes various voltage ratings and package types, such as TO-252 and SOD configurations. The TO-220FN variant specifically targets applications requiring through-hole mounting and higher mechanical stability within vehicle electronics systems.
The RB088BM150FHTL is listed as a similar level replacement with the same pinout and package type but in tape-and-reel format. Verify compatibility before substitution.