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The RB095T-60NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-220FN-3 package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average rectified forward current of 6 A. The device exhibits a maximum forward voltage of 580 mV at 3 A and a maximum reverse current of 300 uA at 60 V. It supports a forward surge current of 100 A and operates within a junction temperature range up to +150 °C.
Verify the complete part number including the suffix C9 to ensure correct packaging and automotive qualification status. Confirm that the TO-220FN-3 package dimensions match the target PCB footprint. Check for RoHS compliance documentation if required by specific environmental regulations. Ensure the supplier provides valid traceability records for automotive-grade components.
Select this component when a dual-anode Schottky diode is required in a through-hole package with automotive reliability standards. Compare the 6 A current rating and 60 V blocking voltage against system requirements. Consider the thermal performance of the TO-220FN-3 package for heat dissipation needs. Evaluate the low forward voltage drop for efficiency optimization in power conversion stages.
This component belongs to the RB095T series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for general-purpose rectification and clamping applications. The RB095T-60 variant specifically targets 60 V systems. The NZC9 suffix indicates specific packaging and automotive qualification attributes distinct from standard industrial versions.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical specifications before considering alternative manufacturers.