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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 30V 3A TO-252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：720 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1.5 µA @ 30 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RB098BGE-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 35 V and a continuous forward current rating of 6 A. The device exhibits a low forward voltage of 720 mV at 3 A and a minimal reverse leakage current of 1.5 µA at 30 V. It supports a peak surge current of 50 A and operates at junction temperatures up to +150 °C.
Feature Summary
- Ultra-low reverse leakage current for improved efficiency
- Dual anode common cathode topology for bridge rectifier applications
- Low forward voltage drop to minimize conduction losses
- High thermal stability with a maximum junction temperature of 150 °C
Applications
- Switching power supplies
- DC-DC converters
- Free-wheeling diodes in inductive load circuits
Procurement Notes
Verify the specific suffix 'TL' indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the selected variant matches the required electrical ratings for the target circuit design to avoid performance discrepancies.
Selection Notes
Select this component for designs requiring low reverse leakage and high reliability in compact surface-mount layouts. The dual anode configuration simplifies bridge rectifier implementation compared to single-diode solutions. Evaluate thermal management requirements given the 150 °C junction limit and TO-252 package characteristics.
Part Context
This part belongs to the RB098BGE series of ultra-low leakage Schottky barrier diodes from ROHM. The series is designed for general-purpose switching applications where low reverse current is critical. The TO-252 package provides robust mechanical mounting and efficient heat dissipation for medium-power electronics.
Replacement Considerations
The RB098BGE-30 is a compatible alternative offering identical pinout and electrical specifications. Verify package compatibility and ensure the replacement meets all original design constraints before substitution.
