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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 150V 3A TO252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：7 µA @ 150 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RB098BGE150TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 surface-mount package. The device supports a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 6 A. Key electrical parameters include a maximum forward voltage of 830 mV at 3 A, a peak non-repetitive forward surge current of 100 A, and a maximum reverse current of 7 µA at 150 V. The component operates within a junction temperature range up to +150 °C.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Ultra-low reverse leakage current characteristics
- Surface-mount installation style compatible with automated assembly
Applications
- Switching power supply circuits
- Freewheeling diode applications
- Reverse polarity protection
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm package dimensions and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the procurement channel provides valid traceability for the semiconductor batch. Cross-reference the part number with authorized distributor databases to validate current production status and availability constraints.
Selection Notes
Select this component for applications requiring high current handling in a compact surface-mount form factor. The low forward voltage drop contributes to improved system efficiency. Verify that the operating environment remains within the specified thermal limits. Consider the common cathode topology when designing bridge or synchronous rectification circuits. Ensure the PCB footprint matches the TO-252AA (D-Pak) mechanical drawing.
Part Context
This part belongs to the RB098BGE series of ultra-low IR Schottky barrier diodes from ROHM. The series includes variants with different voltage ratings, such as the RB098BGE100 and RB098BGE-30. These devices are designed for standard-grade industrial applications and are explicitly not recommended for automotive equipment use. The series utilizes silicon technology optimized for low loss and fast switching performance.
Replacement Considerations
The RB098BM150 serves as a related variant within the same family but is marked as Not Recommended for New Designs. The RB098BGE150 is the direct equivalent without the TL suffix, sharing identical electrical characteristics and pinout. Verify package compatibility between TO-252M and TO-252GE if substituting.
