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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 60V 3A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：830 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1.5 µA @ 60 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RB098BM-60FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252AA (D-PAK) surface-mount package. The device supports a repetitive peak reverse voltage of 60V and an average rectified forward current of 6A per diode. Key electrical characteristics include a maximum forward voltage of 0.83V at 3A and an ultra-low reverse current of 1.5μA at 60V. The component operates within a junction temperature range up to 175°C.
Feature Summary
- Cathode common dual type configuration
- Ultra low reverse current performance
- High reliability power mold type construction
Applications
- Switching power supply circuits
Procurement Notes
Verify the specific ordering suffix 'TL' against the latest manufacturer documentation to confirm packaging details, such as embossed tape and reel specifications. Ensure that the procurement channel provides genuine components with traceable manufacturing dates to maintain product integrity and compliance with storage guidelines.
Selection Notes
Select this component for applications requiring high-speed switching and low forward voltage drop in a compact surface-mount form factor. Consider the thermal resistance parameters when designing heat dissipation strategies. Verify that the operating environment remains within the specified temperature limits to prevent thermal runaway and ensure long-term operational stability.
Part Context
This part belongs to the RB098BM series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of silicon epitaxial planar technology and offers various voltage ratings. The TO-252AA package provides efficient thermal management for surface-mount assembly processes commonly used in modern electronic equipment manufacturing.
Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers with identical pinouts and packages. Ensure any replacement maintains the required reverse voltage and forward current ratings while matching the thermal characteristics of the original design.
FAQ
What is the maximum junction temperature for the RB098BM-60FNSTL?
The maximum junction temperature is 175°C.
How is the internal circuit configured?
The device features a cathode common dual type configuration.
What is the maximum reverse current specification?
The maximum reverse current is 1.5μA when measured at a reverse voltage of 60V.
