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The RB098BM150FHHTL is a silicon epitaxial planar Schottky barrier diode featuring a cathode common dual configuration. It provides a repetitive peak reverse voltage of 150 V and an average rectified forward current of 6 A per diode. The device supports a peak forward surge current of 100 A and operates with a maximum junction temperature of 175 °C. Electrical characteristics include a maximum forward voltage of 0.83 V at 3 A and a reverse current of 7 μA at 150 V. It is housed in a TO-252 package and meets AEC-Q101 automotive qualification standards.
Verify the specific ordering suffix to confirm packaging details, as variations exist between tape-and-reel formats. Confirm that the component status aligns with current design requirements, noting that related variants may carry different lifecycle statuses such as not recommended for new designs. Ensure all electrical parameters match the target circuit specifications before finalizing procurement orders.
Select this component for applications requiring high thermal stability and low reverse leakage. The 175 °C junction temperature rating allows for operation in demanding environments. Verify that the TO-252 package footprint matches the PCB layout constraints. Consider the dual common cathode configuration for synchronous rectification or logic OR-ing applications within the specified voltage and current limits.
This part belongs to the RB098BM series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is characterized by its ultra-low reverse current and robust construction suitable for automotive electronics. The device utilizes silicon epitaxial planar technology to ensure consistent performance and reliability across varying operating conditions.
Direct replacements include the RB098BM150FHH and RB098BM150FHTL. These variants share identical pinouts and packages but may differ in packaging quantities or taping specifications. Verify compatibility with existing assembly processes when substituting these parts.
The maximum junction temperature is 175 °C.
Yes, the device is qualified according to the AEC-Q101 standard.
The device features a cathode common dual type inner circuit.